DocumentCode
1068759
Title
Directly contacted GaAs IMPATT´s of high-current tunability with an etched heat sink
Author
Schawarz, R.I.
Author_Institution
Technische Universität Wien, Vienna, Austria
Volume
27
Issue
5
fYear
1980
fDate
5/1/1980 12:00:00 AM
Firstpage
1003
Lastpage
1005
Abstract
The design and some of the operating characteristics of GaAs IMPATT´s and the construction of the resonator are described. The diodes are not mounted in commonly used packages but contacted directly with metal post. Because of the absence of the usual gold wire and the package capacitance it is possible to tune the diodes with current density up to 19 GHz.
Keywords
Capacitance; Current density; Cutoff frequency; Etching; Gallium arsenide; Gold; Heat sinks; Packaging; Schottky diodes; Wire;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1980.19975
Filename
1480768
Link To Document