• DocumentCode
    1068779
  • Title

    Degradation of Insulating Materials, Including SiO2 DUE to SF6 GAS Dissociation Products

  • Author

    Suzuki, T. ; Nakayama, S. ; Yoshimitsu, T.

  • Author_Institution
    Toshiba Corporation Heavy Apparatus Engineering Laboratory Kawasaki, Japan
  • Issue
    1
  • fYear
    1980
  • Firstpage
    53
  • Lastpage
    58
  • Abstract
    Materials, including silicon dioxide (SiO2), are degraded by SF6 gas dissociation products. Changes in surface resistivity and volume resis tivity due to SF6 dissociation products were investigated in SiO2-containing insulating materials, for instance porcelain. It was found that surface resistance and volume resistance of these materials decrease with exposure of SF6 gas dissociation products and moisture. It was shown that the chemical products that lessen the surface and volume resistivity are some acids and salts of these acids. By chemical analysis, the predominant acid was shown to be H2SiF6.
  • Keywords
    Chemical analysis; Chemical products; Conductivity; Degradation; Gas insulation; Moisture; Porcelain; Silicon compounds; Sulfur hexafluoride; Surface resistance;
  • fLanguage
    English
  • Journal_Title
    Electrical Insulation, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9367
  • Type

    jour

  • DOI
    10.1109/TEI.1980.298296
  • Filename
    4080691