Basic study on conductive characteristics of SiC power device for its application to AC/DC converter

Author

Matsukawa, Tatsuya ; Chikaraishi, Hirotaka ; Sato, Yoshihisa ; Shimada, Ryuichi

Author_Institution

Center for Integrated Res. in Sci. & Eng., Nagoya Univ., Japan

Volume

14

Issue

2

fYear

2004

fDate

6/1/2004 12:00:00 AM

Firstpage

690

Lastpage

692

Abstract

Recently, the SiC-based power electronics device has been under development, which has more advanced electrical characteristics than conventional Si-based device. Main electrical characteristics of SiC-based power electronics device are high operational temperature, high withstanding voltage, low on-state resistance and fast switching frequency. Especially, forward voltage, including on-state resistance characteristics, is the important conductive feature on operational loss reduction of SiC-based power electronics device. To study SiC-based device experimentally, SiC-based Schottky barrier diode (SBD), as an example of SiC-based power electronics device, is examined on its temperature dependence of forward voltage in comparison with Si-based SBD. The application of SiC-based power electronics device to large capacity AC/DC converter is also discussed.

Keywords

AC-DC power convertors; Schottky diodes; electric resistance; high-temperature electronics; power semiconductor devices; silicon compounds; wide band gap semiconductors; AC/DC converter; SiC; SiC power device; SiC-based Schottky barrier diode; SiC-based power electronics device; conductive characteristics; electrical characteristics; forward voltage; on-state resistance characteristics; operational loss reduction; operational temperature; silicon carbide; switching frequency; temperature dependence; withstanding voltage; DC-DC power converters; Electric resistance; Electric variables; Low voltage; Power electronics; Schottky barriers; Schottky diodes; Silicon carbide; Switching frequency; Temperature; AC/DC converter; Schottky Barrier Diode; SiC-based power device; on-state resistance;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/TASC.2004.830031

Filename

1324887