A high-power GaAs MESFET with an experimentally optimized pattern

A high-power GaAs MESFET with a high packing density has been developed in order to increase the total gatewidth within limited practical device size. The gate-finger width was experimentally optimized to increase the packing density without deterioration of the power gain. The developed power MESFET is the crossover structure and has a total gatewidth of 15 mm with gate-finger width of 190 µm in a 2.2-mm-wide chip. The packing density was almost doubled, and the output powers of 25 W at 6 GHz, and 17 W at 8 GHz were obtained from the internally matched four-chip devices.