Title :
Fast optical modulation of 10.6-µm radiation in GaAs waveguides by electrical injection
Author :
Seib, D.H. ; Stoll, H.M.
Author_Institution :
Rockwell International Corp., El Segundo, CA, USA
fDate :
4/1/1977 12:00:00 AM
Abstract :
A GaAs p+-n-n+ diode has been used to study modulation of guided 1.15- and 10.6-μm radiation by electrical injection of free carriers. After irradiation with high-energy electrons to reduce the electron-hole recombination time, device rise and fall times in the nanosecond region are observed.
Keywords :
Electron optics; Gallium arsenide; Optical attenuators; Optical modulation; Optical pumping; Optical refraction; Optical variables control; Optical waveguides; Semiconductor diodes; Substrates;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1977.1069322
