Title :
A two-dimensional simulation of a cooled, submicrometer indium arsenide Schottky-gate FET
Author :
Reich, Robert K. ; Ferry, David K.
Author_Institution :
Colorado State University, Fort Collins, CO
fDate :
6/1/1980 12:00:00 AM
Abstract :
A two-dimensional simulation of an InAs, Schottky-gate FET operated at 77 K is reported. A device of 0.25-µm source-drain spacing is assumed. The full field-dependent mobility is treated. The results suggest that such a device would have performance characteristics comparable even to Josephson junctions for high-speed low-power logic applications.
Keywords :
Circuits; Conducting materials; Electron mobility; Gallium arsenide; Indium; Josephson junctions; Logic devices; Microwave FETs; Temperature; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.19987
