Title :
Modeling the influence of carrier profiles on MESFET characteristics
Author :
Higgins, John A.
Author_Institution :
Rockwell International, Thousand Oaks, CA, USA
fDate :
6/1/1980 12:00:00 AM
Abstract :
Continuing development of materials methods and the need to improve MESFET device performance calls for accurate modeling of the effect of free-carrier profiles upon MESFET performance. A computer program known as SATVO is described which provides, by means of a numerical solution, saturation characteristics and gate-electrode capacitances for devices of specified geometry fabricated from layers of any profile which may be specified by either Gaussian expressions (as for ion-implanted layers) or by piecewise-linear descriptions. Examples of the use of this program are also provided.
Keywords :
Capacitance; Computational geometry; Doping profiles; Electrodes; FETs; Gallium arsenide; Helium; MESFETs; Piecewise linear techniques; Semiconductor process modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.19988
