Title :
Design and fabrication of high-speed GaAlAs/GaAs heterojunction transistors
Author :
Bailbe, Jean-pierre ; Marty, Antoine ; Hiep, Pham Huu ; Rey, G.E.
Author_Institution :
Laboratoire d´´Automatique et d´´Analyse des Systèmes, Toulouse Cedex, France
fDate :
6/1/1980 12:00:00 AM
Abstract :
In this paper we present an analysis of the HF capabilities of GaAlAs/GaAs heterojunction transistors, a description of the technological characteristics of the samples processed by liquid-phase epitaxial technique for UHF applications, and a report of the experimental results already obtained.
Keywords :
Capacitance; Current density; Cutoff frequency; Doping profiles; Fabrication; Gallium arsenide; HEMTs; Heterojunctions; MODFETs; Performance gain;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.20000
