• DocumentCode
    1069032
  • Title

    GaAs and related heterojunction charge-coupled devices

  • Author

    Deyhimy, Ira ; Eden, Richard C. ; Harris, James S., Jr.

  • Author_Institution
    Rockwell International Electronics Research Center, Thousand Oaks, CA, USA
  • Volume
    27
  • Issue
    6
  • fYear
    1980
  • fDate
    6/1/1980 12:00:00 AM
  • Firstpage
    1172
  • Lastpage
    1180
  • Abstract
    A Schottky-barrier gate GaAs charge-coupled device (CCD) technology is described. Experimental devices fabricated in this technology have operated with charge transfer efficiency >0.999/transfer and-have operated at clock frequency f_{cl} = 500 MHz. Implications of this technology in high-speed signal processing and in visible and near-infrared imaging are discussed.
  • Keywords
    Charge coupled devices; Clocks; Electron mobility; Gallium arsenide; Heterojunctions; Infrared imaging; Optical imaging; Photonic band gap; Signal processing; Silicon;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1980.20002
  • Filename
    1480795
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1069032