Title :
Equivalent circuit model of FET including distributed gate effects
Author :
Kuvås, Reidar L.
Author_Institution :
NTNF, Oslo, Norway
fDate :
6/1/1980 12:00:00 AM
Abstract :
A model is presented which takes into account the distributed nature of the gate in microwave field-effect transistors (FET´s). The model is used to derive an expression for the equivalent gate impedance. The result is suitable for determining the reduction in the available gain tlue to gate losses.
Keywords :
Degradation; Electrodes; Equivalent circuits; Gallium arsenide; Geometry; Helium; Impedance; Microwave FETs; Partial differential equations; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.20006
