DocumentCode :
1069075
Title :
Direct Modulation Properties of 1.55- μm InGaAsP/InP Microring Lasers
Author :
Mikroulis, Spiros ; Roditi, Eugenia ; Syvridis, Dimitris
Author_Institution :
Athens Univ., Athens
Volume :
26
Issue :
2
fYear :
2008
Firstpage :
251
Lastpage :
256
Abstract :
The modulation properties of 1.55-mum InGaAsP/InP microring lasers are investigated using a multimode rate equation model. A detailed study, with respect to Q-factor and extinction ratio calculations, is carried out as a function of different microring´s key design and operating parameters. The modulator´s performance study shows the possibility for a successful operation at a bit rate of 2.4 Gb/s for radii between 30 and 50 mum and proper values for the bus waveguide reflectivity.
Keywords :
III-V semiconductors; Q-factor; gallium arsenide; gallium compounds; indium compounds; micro-optics; optical modulation; semiconductor lasers; InGaAsP-InP; Q-factor; bit rate 2.4 Gbit/s; bus waveguide reflectivity; direct modulation properties; extinction ratio; microring lasers; multimode rate equation model; size 1.55 mum; size 30 mum to 50 mum; Equations; Extinction ratio; Gain; Indium phosphide; Laser modes; Laser noise; Laser theory; Reflectivity; Ring lasers; Waveguide lasers; Direct modulations; microring laser;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/JLT.2007.909907
Filename :
4451233
Link To Document :
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