Title :
A two-phase CCD on GaAs with 0.3-µm-wide electrode gaps
Author :
Kellner, Walter ; Ablassmeier, Ulrich ; Kniepkamp, Hermann
Author_Institution :
Siemens AG, Munich, Federal Republic of Germany
fDate :
6/1/1980 12:00:00 AM
Abstract :
A two-phase GaAs Schottky-barrier CCD with 32 electrodes, a gate length of 4 µm, and interelectrode gaps of 0.3 µm was fabricated and tested. The unidirectional charge flow is obtained by using a stepped-electrode configuration realized by etching and angle evaporation. First measurements show the feasibility of this principle which greatly simplifies CCD operation at very high frequencies.
Keywords :
Charge coupled devices; Clocks; Degradation; Electrodes; Fingers; Frequency; Gallium arsenide; Microwave devices; Schottky barriers; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.20007
