DocumentCode :
1069098
Title :
Direct optical injection locking of a 52-GHz InP-InGaAs HPT oscillator IC for over-100-Gb/s half- or full-rate optoelectronic clock recovery
Author :
Kamitsuna, H. ; Shibata, T. ; Kurishima, K. ; Ida, M.
Author_Institution :
NTT Photonics Labs., NTT Corp., Kanagawa, Japan
Volume :
15
Issue :
1
fYear :
2003
Firstpage :
108
Lastpage :
110
Abstract :
We present a fully monolithic 52-GHz oscillator integrated circuit (IC) that uses a back-illuminated InP-InGaAs heterojunction phototransistor (HPT). The HPT with an emitter size of 5 μm/spl phi/, where the whole emitter area can be illuminated from the back side of the substrate, exhibits a maximum oscillation frequency of 135 GHz, thus enabling us to achieve a 52-GHz oscillator with a wide margin. Optical injection locking was evaluated by using two laser diodes with a frequency difference of around 104 GHz, which corresponds to the oscillator´s second-harmonic frequency. Injection locking is successfully achieved for the second harmonic as well as for the fundamental spectrum. The oscillator IC promises to achieve a half- or full-rate optoelectronic clock extraction from over-100-Gb/s optical data streams.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; microwave photonics; optical receivers; phototransistors; semiconductor lasers; synchronisation; 100 Gbit/s; 135 GHz; 5 micron; 52 GHz; GHz InP-InGaAs HPT oscillator IC; InP-InGaAs; back-illuminated InP-InGaAs heterojunction phototransistor; direct optical injection locking; emitter area; frequency difference; fully monolithic integrated circuit; fundamental spectrum; illuminated; laser diodes; maximum oscillation frequency; optical data streams; optical injection locking; optoelectronic clock extraction; optoelectronic clock recovery; oscillator IC; second-harmonic frequency; substrate; Clocks; Data mining; Diode lasers; Frequency; Heterojunctions; Injection-locked oscillators; Monolithic integrated circuits; Photonic integrated circuits; Phototransistors; Stimulated emission;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2002.805802
Filename :
1159078
Link To Document :
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