DocumentCode
1069151
Title
Interaction of microwave biased n-GaAs and 337 µm radiation
Author
Epton, Paul J. ; Wilson, William L., Jr. ; Tittel, Frank K.
Author_Institution
Rice University, Houston, TX
Volume
13
Issue
6
fYear
1977
fDate
6/1/1977 12:00:00 AM
Firstpage
409
Lastpage
412
Abstract
n-GaAs cooled to 4.2 K is impact ionized with X-band microwave pulses. Fast rise-time modulation of 337 μm radiation is observed. The GaAs is less absorptive in the ionized state than in the unionized state.
Keywords
Absorption; Amplitude modulation; Bandwidth; Electrons; Gallium arsenide; Helium; Impact ionization; Ionizing radiation; Microwave devices; Pulse modulation;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1977.1069349
Filename
1069349
Link To Document