Title :
Monothically Integrated Long-Wavelength Tunable Photodetector
Author :
Lv, Jihe ; Huang, Hui ; Ren, Xiaomin ; Miao, Ang ; Li, Yiqun ; Song, Hailan ; Wang, Qi ; Huang, Yongqing ; Cai, Shiwei
Author_Institution :
Beijing Univ. of Post & Telecommun., Beijing
Abstract :
This paper demonstrated a tunable long-wavelength photodetector by using the heteroepitaxy growth of InP-In0.53Ga0.47As-InP p-i-n structure on a GaAs-based GaAs/AlAs Fabry-Perot filter structure. High-quality heteroepitaxy was realized by employing a thin low-temperature buffer layer. A wavelength tuning range of 10.0 nm, an external quantum efficiency of about 23%, a spectral linewidth of 0.8 nm, and a 3-dB bandwidth of 6.2 GHz were simultaneously obtained in the device.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; photodetectors; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; Fabry-Perot filter structure; GaAs-AlAs; InP-In0.53Ga0.47As-InP; bandwidth 6.2 GHz; heteroepitaxy growth; long-wavelength tunable photodetector; monothically integrated photodetector; p-i-n structure; Educational technology; Gallium arsenide; Indium phosphide; Mirrors; Optical device fabrication; Optical filters; PIN photodiodes; Photodetectors; Substrates; Tunable circuits and devices; Heteroepitaxy; photodetector; tunable;
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2007.909971
