DocumentCode :
1069267
Title :
An improved empirical fit to Baraff´s universal curves for the ionization coefficients of electron and hole multiplication in semiconductors
Author :
Sutherland, A.D.
Author_Institution :
University of Florida, Gainesville, FL
Volume :
27
Issue :
7
fYear :
1980
fDate :
7/1/1980 12:00:00 AM
Firstpage :
1299
Lastpage :
1300
Abstract :
Since its introduction in 1966, an empirical quadratic fit to Baraff´s curves due to Crowell and Sze, has been widely used, in conjunction with the use of Baraff´s theory to extrapolate experimental data for electron and hole ionization coefficients to conditions-notably temperature-differing from those under which those data were derived. The quality of that quadratic fit is reexamined, and an improved cubic fit is proposed.
Keywords :
Charge carrier processes; Electron emission; Electron optics; Erbium; Ionization; Phonons; Schottky diodes; Semiconductor diodes; Stimulated emission; Temperature dependence;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1980.20025
Filename :
1480818
Link To Document :
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