• DocumentCode
    1069267
  • Title

    An improved empirical fit to Baraff´s universal curves for the ionization coefficients of electron and hole multiplication in semiconductors

  • Author

    Sutherland, A.D.

  • Author_Institution
    University of Florida, Gainesville, FL
  • Volume
    27
  • Issue
    7
  • fYear
    1980
  • fDate
    7/1/1980 12:00:00 AM
  • Firstpage
    1299
  • Lastpage
    1300
  • Abstract
    Since its introduction in 1966, an empirical quadratic fit to Baraff´s curves due to Crowell and Sze, has been widely used, in conjunction with the use of Baraff´s theory to extrapolate experimental data for electron and hole ionization coefficients to conditions-notably temperature-differing from those under which those data were derived. The quality of that quadratic fit is reexamined, and an improved cubic fit is proposed.
  • Keywords
    Charge carrier processes; Electron emission; Electron optics; Erbium; Ionization; Phonons; Schottky diodes; Semiconductor diodes; Stimulated emission; Temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1980.20025
  • Filename
    1480818