DocumentCode
1069267
Title
An improved empirical fit to Baraff´s universal curves for the ionization coefficients of electron and hole multiplication in semiconductors
Author
Sutherland, A.D.
Author_Institution
University of Florida, Gainesville, FL
Volume
27
Issue
7
fYear
1980
fDate
7/1/1980 12:00:00 AM
Firstpage
1299
Lastpage
1300
Abstract
Since its introduction in 1966, an empirical quadratic fit to Baraff´s curves due to Crowell and Sze, has been widely used, in conjunction with the use of Baraff´s theory to extrapolate experimental data for electron and hole ionization coefficients to conditions-notably temperature-differing from those under which those data were derived. The quality of that quadratic fit is reexamined, and an improved cubic fit is proposed.
Keywords
Charge carrier processes; Electron emission; Electron optics; Erbium; Ionization; Phonons; Schottky diodes; Semiconductor diodes; Stimulated emission; Temperature dependence;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1980.20025
Filename
1480818
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