Title :
An improved empirical fit to Baraff´s universal curves for the ionization coefficients of electron and hole multiplication in semiconductors
Author :
Sutherland, A.D.
Author_Institution :
University of Florida, Gainesville, FL
fDate :
7/1/1980 12:00:00 AM
Abstract :
Since its introduction in 1966, an empirical quadratic fit to Baraff´s curves due to Crowell and Sze, has been widely used, in conjunction with the use of Baraff´s theory to extrapolate experimental data for electron and hole ionization coefficients to conditions-notably temperature-differing from those under which those data were derived. The quality of that quadratic fit is reexamined, and an improved cubic fit is proposed.
Keywords :
Charge carrier processes; Electron emission; Electron optics; Erbium; Ionization; Phonons; Schottky diodes; Semiconductor diodes; Stimulated emission; Temperature dependence;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.20025