Integrated injection logic for VLSI

This study shows that reducing the basewidth of I²L structures improves the intrinsic βuibut improvements in the extrinsic βueand the delay times at low-current levels are less significant while high-current performance is degraded. Narrowing the epi region improves both βuiand βueand the delay times at high currents, but degrades injection region efficiency λ, and delay times at low currents.