A multiple p-n-junction structure obtained from as-grown Czochralski silicon crystals by heat treatment: Application to solar cells

Multiple p-n junctions have been prepared in as-grown Czochralski p-type silicon through overcompensation near the oxgen periodic concentration maxima by oxygen thermal donors generated during heat treatment at 450°C. Application of the multiple p-n-junction configuration to photovoltaic energy conversion has been investigated. A new solar-cell structure based on multiple p-n junctions was developed. Theoretical analysis showed that a significant increase in collection efficiency over the conventional solar cells can be achieved.