• DocumentCode
    1069441
  • Title

    Subnanosecond self-aligned I2L/MTL circuits

  • Author

    Tang, D.D. ; Ning, Tak H. ; Isaac, Randall D. ; Feth, George C. ; Wiedmann, Siegfried K. ; Yu, Hwa-Nien

  • Author_Institution
    IBM Thomas J. Watson Research Center, Yorktown Heights, NY
  • Volume
    27
  • Issue
    8
  • fYear
    1980
  • fDate
    8/1/1980 12:00:00 AM
  • Firstpage
    1379
  • Lastpage
    1384
  • Abstract
    A self-aligned I2L/MTL technology featuring collectors doped from and contacted by polysilicon, self-aligned collector and base contact edges, and metal-interconnected bases is described. Experimental ring-oscillator circuits designed with 2.5-µm design rules and fabricated with this technology exhibit gate delays as small as 0.8 ns at I_{c} = 100 µA for fan-in = 1 and fan-out = 3. Increased wiring flexibility and improved circuit density are inherent advantages of this self-aligned technology.
  • Keywords
    Delay; Diodes; Helium; Integrated circuit interconnections; Laboratories; Merging; Rails; Shape; Silicon; Wiring;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1980.20043
  • Filename
    1480836
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1069441