DocumentCode :
1069481
Title :
OXIL, a versatile bipolar VLSI technology
Author :
Agraz-Güerena, Jorge ; Panousis, Peter T. ; Morris, B.L.
Author_Institution :
Bell Laboratories, Allentown, PA
Volume :
27
Issue :
8
fYear :
1980
fDate :
8/1/1980 12:00:00 AM
Firstpage :
1397
Lastpage :
1401
Abstract :
A bipolar VLSI technology, for Oxide Isolated Logic (OXIL) circuits has been developed which combines high-frequency conventional down-transistors with inverted up-transistors which are fabricated in a common process on the same chip site. The up-transistor is especially designed to optimize I2L circuits for high packing density, speed, and performance. High-pressure-steam oxide isolation and an up-diffused active base are combined to fabricate the up-transistor with 
MHz and 
, which allows I2L delays down to 3 ns at 
and 7 ns at 
. The down-transistor is an oxide-isolated implanted-base transistor with an As emitter. It exhibits gains of 100-150 at 
GHz and supports subnanosecond CML, high-current buffer circuitry, and linear interfacing.
MHz and , which allows I2L delays down to 3 ns at and 7 ns at . The down-transistor is an oxide-isolated implanted-base transistor with an As emitter. It exhibits gains of 100-150 at GHz and supports subnanosecond CML, high-current buffer circuitry, and linear interfacing.Keywords :
Bipolar transistors; Delay; Design optimization; Helium; Integrated circuit technology; Isolation technology; Logic circuits; Pulse inverters; Silicon; Very large scale integration;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1980.20047
Filename :
1480840
Link To Document :
