• DocumentCode
    1069539
  • Title

    Film properties of MoSi2and their application to self-aligned MoSi2gate MOSFET

  • Author

    Mochizuki, Tohru ; Tsujimaru, Takaya ; Kashiwagi, Masahiro ; Nishi, Yoshio

  • Author_Institution
    NEC-Toshiba Information Systems, Inc., Kanagawa, Japan
  • Volume
    27
  • Issue
    8
  • fYear
    1980
  • fDate
    8/1/1980 12:00:00 AM
  • Firstpage
    1431
  • Lastpage
    1435
  • Abstract
    Molybdenum silicide (MoSi2) gate technology has been extensively investigated in conjunction with MOS device performance and reliability. Features of the MoSi2gate technology are to realize a low resistivity of 1 × 10-4Ω . cm for both gate and interconnection, and to give rise to higher reliability under both positive and negative bias stress of 2 MV/cm at 250° C. Problems on the ohmic contact between MoSi2and single-crystal substrates are not completely solved yet, particularly when the device is processed at high temperature after MoSi2deposition.
  • Keywords
    Annealing; Atomic layer deposition; Conductivity; Integrated circuit interconnections; Semiconductor films; Silicides; Silicon; Sputtering; Substrates; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1980.20052
  • Filename
    1480845
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1069539