Title :
Film properties of MoSi2and their application to self-aligned MoSi2gate MOSFET
Author :
Mochizuki, Tohru ; Tsujimaru, Takaya ; Kashiwagi, Masahiro ; Nishi, Yoshio
Author_Institution :
NEC-Toshiba Information Systems, Inc., Kanagawa, Japan
fDate :
8/1/1980 12:00:00 AM
Abstract :
Molybdenum silicide (MoSi2) gate technology has been extensively investigated in conjunction with MOS device performance and reliability. Features of the MoSi2gate technology are to realize a low resistivity of 1 × 10-4Ω . cm for both gate and interconnection, and to give rise to higher reliability under both positive and negative bias stress of 2 MV/cm at 250° C. Problems on the ohmic contact between MoSi2and single-crystal substrates are not completely solved yet, particularly when the device is processed at high temperature after MoSi2deposition.
Keywords :
Annealing; Atomic layer deposition; Conductivity; Integrated circuit interconnections; Semiconductor films; Silicides; Silicon; Sputtering; Substrates; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.20052
