DocumentCode :
1069573
Title :
Gain-frequency-current relation for Pb1-x Snx Te double heterostructure lasers
Author :
Anderson, William W.
Author_Institution :
Lockheed Palo Alto Research Laboratory, Palo Alto, CA
Volume :
13
Issue :
7
fYear :
1977
fDate :
7/1/1977 12:00:00 AM
Firstpage :
532
Lastpage :
543
Abstract :
The active region gain expression for Pb1-x Snx Te lasers is obtained from the 
model of the conduction and valence band extrema. Curves of gain versus frequency with current, temperature, and majority carrier concentration as parameters are calculated using published values of the model parameters. In addition, threshold current versus temperature and threshold current versus majority carrier concentration curves are given. A simple expression is obtained for the conductivity effective mass for use in the equation for free-carrier absorption appropriate to the highly degenerate majority carrier concentrations typical of Pb1-x Snx Te laser material.
model of the conduction and valence band extrema. Curves of gain versus frequency with current, temperature, and majority carrier concentration as parameters are calculated using published values of the model parameters. In addition, threshold current versus temperature and threshold current versus majority carrier concentration curves are given. A simple expression is obtained for the conductivity effective mass for use in the equation for free-carrier absorption appropriate to the highly degenerate majority carrier concentrations typical of PbKeywords :
Absorption; Conductivity; Effective mass; Equations; Frequency; Laser modes; Tellurium; Temperature; Threshold current; Tin;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1977.1069386
Filename :
1069386
Link To Document :
