• DocumentCode
    1069636
  • Title

    Simulation of doping processes

  • Author

    Ryssel, Heiner ; Haberger, Karl ; Hoffmann, Klaus ; Prinke, Gertraud ; Dumcke, R. ; Sachs, A.

  • Author_Institution
    Fraunhofer-Institut für Festkörpertechnologie, Munich, Germany
  • Volume
    27
  • Issue
    8
  • fYear
    1980
  • fDate
    8/1/1980 12:00:00 AM
  • Firstpage
    1484
  • Lastpage
    1492
  • Abstract
    Models for the simulation of complex fabrication steps for IC manufacture together with a simulation program are described. Multistep processes including ion implantation, oxidation, diffusion, and etching can be simulated, giving the doping profile, junction depth, and sheet resistivity. The program can also be applied to extract data from experimental results. The models used include the field enhancement of the diffusion together with the vacancy enhancement and the complex retardation for arsenic and boron.
  • Keywords
    Conductivity; Data mining; Doping profiles; Etching; Fabrication; Integrated circuit modeling; Ion implantation; Oxidation; Semiconductor process modeling; Virtual manufacturing;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1980.20061
  • Filename
    1480854
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1069636