Title :
An improved liquid-phase-epitaxial growth method for GaAs-(Ga, Al)As double heterostructures
Author :
Akita, K. ; Nishitani, Y. ; Nakajima, K. ; Yamaguchi, A. ; Kusunoki, T. ; Kotani, T. ; Imai, H. ; Takusagawa, M. ; Ryuzan, O.
Author_Institution :
Fujitsu Laboratories, Ltd., Kawasaki, Japan
fDate :
8/1/1977 12:00:00 AM
Abstract :
A new growth method of GaAs-(Ga, Al)As multilayer, in which the solid surface is always covered by a melt during the growth of multilayer, is proposed, and laser characteristics of wafers grown by this method are presented.
Keywords :
Artificial intelligence; Boats; Containers; Nonhomogeneous media; Oxidation; Pistons; Rails; Solids; Surface contamination; Surface emitting lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1977.1069395
