DocumentCode :
1069704
Title :
Near-infrared In1-x Gax P1-z Asz double-heterojunction lasers: Constant-temperature LPE growth and operation in an external-grating cavity
Author :
Wright, P.D. ; Rezek, E.A. ; Ludowise, M.J. ; Holonyak, N., Jr.
Author_Institution :
University of Illinois at Urbana-Champaign, Urbana, Ill.
Volume :
13
Issue :
8
fYear :
1977
fDate :
8/1/1977 12:00:00 AM
Firstpage :
637
Lastpage :
642
Abstract :
InP-In1-x Gax P1-z Asz -InP ( 
) double-heterojuncfion (DH) lasers emitting at 
m (77 K) have been fabricated by constant-temperature liquid-phase epitaxy (LPE). The crystal-growth process is described and compared to previous work on visible spectrum ( 
-Å) In1-x Gax P1-z Asz double-heterojunction lasers. Emission spectra are presented for the near-infrared quaternary DH lasers. In particular, the observation of cavity oscillations in the low-level spontaneous-emission spectra allows the determination of the index dispersion quantity over a wide wavelength range. Finally, these In1-x Gax P1-z Asz DH lasers are operated in an external-grating cavity. Such operation permits tunable, narrow-linewidth laser emission and provides information concerning radiative-recombination processes. Comparisons are made to earlier work on external-grating operation of visible-spectrum ( -Å) In1-x Gax P1-z Asz DH lasers.
) double-heterojuncfion (DH) lasers emitting at m (77 K) have been fabricated by constant-temperature liquid-phase epitaxy (LPE). The crystal-growth process is described and compared to previous work on visible spectrum ( -Å) In -Å) InKeywords :
DH-HEMTs; Epitaxial growth; Gratings; Heterojunctions; Indium phosphide; Infrared heating; Laser theory; Laser tuning; Thermal conductivity; Tunable circuits and devices;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1977.1069397
Filename :
1069397
Link To Document :
