Title :
Embedded-stripe GaAs-GaAlAs double-heterostructure lasers with polycrystalline GaAsP layers - II: Lasers with etched mirrors
Author :
Itoh, Kunio ; Asahi, Kunihiko ; Inoue, Mono ; Teramoto, Iwao ; Asahi, Koichiro ; Inoue, M. ; Teramoto, I.
Author_Institution :
Matsushita Electronics Corporation, Takatsuki, Osaka, Japan
fDate :
8/1/1977 12:00:00 AM
Abstract :
Monolithic CW lasers with low threshold are reported in which mesa stripes are embedded with vapor-phase-grown high-resistivity GaAsP layers and cavity mirrors are formed by chemical etching. An etching solution consisting of NaOH, H2O2, and NH4OH has turned out to offer excellently flat-cavity mirrors on
Keywords :
Chemical lasers; DH-HEMTs; Etching; Laser modes; Light sources; MONOS devices; Mirrors; Optical device fabrication; Temperature; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1977.1069406
