DocumentCode :
1069823
Title :
Visible-light laser oscillation in indirect-bandgap Alx Ga1-x As (77 K)
Author :
Makita, Yunosuke ; Gonda, Shun-ichi
Author_Institution :
Optoelectronics Section, Electrotechnical Laboratory, Tanashi, Tokyo, Japan
Volume :
13
Issue :
8
fYear :
1977
fDate :
8/1/1977 12:00:00 AM
Firstpage :
642
Lastpage :
646
Abstract :
Laser oscillation was accomplished at 77 K for the first time in indirect-gap Alx Ga1-x As ( 
) incorporated with nitrogen atoms by ion implantation. Pumping was made by a coumarin 102 dye laser (480 nm). Threshold pumping power was 
W/cm2in nitrogen-doped Alx Ga1-x As ( ), and laser oscillation was not observed in undoped samples. Nitrogen atoms, introduced into the undoped Alx Ga1-x As active layer, were found to work as isoelectronic traps and to be responsible for stimulated emission and laser oscillation.
) incorporated with nitrogen atoms by ion implantation. Pumping was made by a coumarin 102 dye laser (480 nm). Threshold pumping power was W/cm2in nitrogen-doped Al ), and laser oscillation was not observed in undoped samples. Nitrogen atoms, introduced into the undoped AlKeywords :
Atomic beams; Electrons; Gallium arsenide; Gratings; Heterojunctions; Laser feedback; Laser modes; Nitrogen; Pump lasers; Semiconductor lasers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1977.1069409
Filename :
1069409
Link To Document :
