DocumentCode
1069876
Title
A theory on long time delays and internal Q switching in GaAs junction lasers
Author
Nunes, F.D. ; Patel, N.B. ; Ripper, Jose E.
Author_Institution
Universidade Estadual de Campinas, Campinas, Brazil
Volume
13
Issue
8
fYear
1977
fDate
8/1/1977 12:00:00 AM
Firstpage
675
Lastpage
681
Abstract
In this paper we present a theory that explains long time delays and internal 
switching in GaAs junction lasers, using only processes known to occur in these lasers: perturbation of refractive index of the active region by injected carriers, joule heating, and gain guiding.
switching in GaAs junction lasers, using only processes known to occur in these lasers: perturbation of refractive index of the active region by injected carriers, joule heating, and gain guiding.Keywords
Current density; Delay effects; Equations; Gallium arsenide; Heating; Laser theory; Optical pulses; Propagation losses; Refractive index; Stimulated emission;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1977.1069413
Filename
1069413
Link To Document