مرکز منطقه ای اطلاع رساني علوم و فناوري

DocumentCode :

1069896

Title :

Semiconductor streamer lasers

Author :

Basov, N.G. ; Molchanov, A.G. ; Nasibov, A.S. ; Obidin, A.Z. ; Pechenov, A.N. ; Popov, Yu.M.

Author_Institution :

P. N. Lebedev Physical Institute, Academy of Science, Moscow, U.S.S.R.

Volume :

Issue :

fYear :

1977

fDate :

8/1/1977 12:00:00 AM

Firstpage :

699

Lastpage :

704

Abstract :

A new method of electrically exciting generation of light behind the ionization front in streamers is theoretically and experimentally considered. Light intensity of $\\sim 10^{9}$ W/cm²was generated in CdxSe1-xand ZnSe crystals from radiation regions having characteristic dimensions of $\\sim5 \\mu$ m, and moving with velocities $\\sim3.10^{8}$ cm/s.

Keywords :

Degradation; Fiber lasers; Gallium arsenide; Laser excitation; Laser theory; Mesons; Radiative recombination; Semiconductor lasers; Spontaneous emission; Temperature;

fLanguage :

English

Journal_Title :

Quantum Electronics, IEEE Journal of

Publisher :

ieee

ISSN :

0018-9197

Type :

jour

DOI :

10.1109/JQE.1977.1069415

Filename :

1069415

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1069896