Single-heterostructure diode lasers formed by compositional interdiffusion in PbS
1-xSe
xand Pb
1-xSn
xSe and by liquid-phase-epitaxy (LPE) in Pb
1-xSn
xSe show Performance characteristics significantly better than those observed in conventional homostructure lasers. Higher operating temperatures were obtained for all compositions, with CW operation above 77 K being achieved for compositions corresponding to wavelengths from 4.1 to 12.7 μm. Single-ended, CW powers as high as 70 mW, corresponding to

percent were observed in PbS
1-xSe
xdevices.