DocumentCode :
1069907
Title :
Single heterostructure lasers of PbS1-xSexand Pb1-xSnxSe with wide tunability
Author :
Linden, K.J. ; Nill, K.W. ; Butler, J.F.
Author_Institution :
Laser Analytics Inc., Lexington, MA
Volume :
13
Issue :
8
fYear :
1977
fDate :
8/1/1977 12:00:00 AM
Firstpage :
720
Lastpage :
725
Abstract :
Single-heterostructure diode lasers formed by compositional interdiffusion in PbS1-xSexand Pb1-xSnxSe and by liquid-phase-epitaxy (LPE) in Pb1-xSnxSe show Performance characteristics significantly better than those observed in conventional homostructure lasers. Higher operating temperatures were obtained for all compositions, with CW operation above 77 K being achieved for compositions corresponding to wavelengths from 4.1 to 12.7 μm. Single-ended, CW powers as high as 70 mW, corresponding to \\eta_{ext} = 44 percent were observed in PbS1-xSexdevices.
Keywords :
Annealing; Diode lasers; Extraterrestrial measurements; Instruments; Laser tuning; Monitoring; Photonic band gap; Pollution measurement; Spectroscopy; Temperature distribution;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1977.1069416
Filename :
1069416
Link To Document :
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