The effects of storage time variations on the forward resistance of silicon p+-n-n+diodes at microwave frequencies

Minority-carrier storage times in p⁺-n-n⁺diodes have been measured over a wide range of diode diameters and forward currents. The reduction of the storage time by surface recombination and by high-level charge injection has been observed. By increasing the diode diameter, a significant increase in the storage time is achievable. The decrease in storage times at high injection levels explains the dependence of the diode´s forward resistance upon forward drive at microwave frequencies.