Self annealing effect on neutron irradiated silicon detectors by Hall effect analysis

Author

Biggeri, U. ; Borchi, E. ; Bruzzi, M. ; Lazanu, S. ; Li, Z.

Author_Institution

Dipartimento di Energetica, Florence Univ., Italy

Volume

43

Issue

3

fYear

1996

fDate

6/1/1996 12:00:00 AM

Firstpage

1599

Lastpage

1604

Abstract

High resistivity n-type silicon samples have been irradiated with ~1 MeV neutrons at fluences between 10¹² and 10¹⁴ n/cm^-2. The radiation induced changes in Hall coefficient and resistivity have been analysed by Hall Effect measurement during a storage time of approximately seven months at room temperature. The Hall coefficient measured for the most irradiated samples, exposed to fluences higher than 4×10¹³ cm^-2, has switched from negative to positive values approximately 200 days after the irradiation. This experimental evidence explains the reverse annealing effect observed in neutron irradiated silicon detectors as being related to the creation of a deep acceptor level which causes the change in conductivity from n to p-type of the irradiated silicon bulk during self annealing. The behaviour of irradiated devices has been analyzed with a model taking into account donor removal and acceptor creation. Results are in agreement with others obtained with different experimental techniques

Keywords

Hall effect; annealing; neutron effects; silicon radiation detectors; Hall coefficient; Hall effect analysis; Si; acceptor creation; deep acceptor level; donor removal; high resistivity n-type silicon samples; neutron irradiated silicon detectors; reverse annealing effect; self annealing effect; Annealing; Capacitance measurement; Conductivity; Hall effect; Neutrons; Radiation detectors; Silicon radiation detectors; Temperature; Time measurement; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.507154

Filename

507154