DocumentCode :
1070013
Title :
Origin of 1/f noise in bipolar transistors
Author :
Stoisiek, Michael ; Wolf, Dietrich
Author_Institution :
Siemens AG, Munich, Germany
Volume :
27
Issue :
9
fYear :
1980
fDate :
9/1/1980 12:00:00 AM
Firstpage :
1753
Lastpage :
1757
Abstract :
In planar n-p-n transistors fabricated in IC technology, the dependence of 1/ 
noise on the base current density jB , the base width WB , and the emitter area FE was measured. The power spectrum 
of the base current fluctuations iB can be represented by the empirical relation 
where 
and β has been found to be 1.3 or 2. The results of measurements on gate-controlled devices indicate that 1/ noise cannot be explained by McWhorter\´s surface model. Therefore, a new model is proposed which assumes resistance fluctuations in the base region as the cause of 1/ noise in bipolar transistors. The model establishes the relation for as well as the magnitude of the coefficients β and γ.
noise on the base current density j of the base current fluctuations i where and β has been found to be 1.3 or 2. The results of measurements on gate-controlled devices indicate that 1/ noise cannot be explained by McWhorter\´s surface model. Therefore, a new model is proposed which assumes resistance fluctuations in the base region as the cause of 1/ noise in bipolar transistors. The model establishes the relation for as well as the magnitude of the coefficients β and γ.Keywords :
Area measurement; Bipolar transistors; Current density; Current measurement; Density measurement; Electrical resistance measurement; Fluctuations; Integrated circuit noise; Noise measurement; Surface resistance;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1980.20097
Filename :
1480890
Link To Document :
