Title :
The bent-guide structure AlGaAs-GaAs semiconductor laser
Author :
Matsumoto, Nobuo
Author_Institution :
Electrical Communication Laboratories, Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan
fDate :
8/1/1977 12:00:00 AM
Abstract :
The laser oscillation of GaAs-AlGaAs DH-structure laser with a bent guide was reported. The threshold current density Jthwas about 3-15 kA/cm2, and the longitudinal mode was single up to 1.7 times Jth. From the simulation experiments, it was concluded that this mode selectivity was due to the multicavity effect.
Keywords :
Fiber lasers; Gold; Helium; Laser modes; Optical coupling; Optical device fabrication; Semiconductor diodes; Semiconductor lasers; Surface waves; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1977.1069428
