• DocumentCode
    1070050
  • Title

    Diffusion in ideal cylindrical and spherical junctions—Apparent diffusion length

  • Author

    Heasell, E.L.

  • Author_Institution
    University of Waterloo, Waterloo, Ontario, Canada
  • Volume
    27
  • Issue
    9
  • fYear
    1980
  • fDate
    9/1/1980 12:00:00 AM
  • Firstpage
    1771
  • Lastpage
    1777
  • Abstract
    Unless junction depths are scaled in the same ratio as other device dimensions, the trend toward smaller devices leads to a relative enhancement of junction-edge effects. In this work, we present some analytical formulas describing the injection of current in ideal step-junction diodes having either plane, cylindrical, or spherical geometries. A normalized surface-recombination velocity S*is used to characterize the adjacent boundary condition. Both blocking and collecting contacts may be modeled by a choice of S*.
  • Keywords
    Boundary conditions; Current density; Diodes; Doping; Electron devices; Geometry; Independent component analysis; Solid modeling; Tail;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1980.20101
  • Filename
    1480894