DocumentCode :
1070050
Title :
Diffusion in ideal cylindrical and spherical junctions—Apparent diffusion length
Author :
Heasell, E.L.
Author_Institution :
University of Waterloo, Waterloo, Ontario, Canada
Volume :
27
Issue :
9
fYear :
1980
fDate :
9/1/1980 12:00:00 AM
Firstpage :
1771
Lastpage :
1777
Abstract :
Unless junction depths are scaled in the same ratio as other device dimensions, the trend toward smaller devices leads to a relative enhancement of junction-edge effects. In this work, we present some analytical formulas describing the injection of current in ideal step-junction diodes having either plane, cylindrical, or spherical geometries. A normalized surface-recombination velocity S*is used to characterize the adjacent boundary condition. Both blocking and collecting contacts may be modeled by a choice of S*.
Keywords :
Boundary conditions; Current density; Diodes; Doping; Electron devices; Geometry; Independent component analysis; Solid modeling; Tail;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1980.20101
Filename :
1480894
Link To Document :
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