DocumentCode
1070050
Title
Diffusion in ideal cylindrical and spherical junctions—Apparent diffusion length
Author
Heasell, E.L.
Author_Institution
University of Waterloo, Waterloo, Ontario, Canada
Volume
27
Issue
9
fYear
1980
fDate
9/1/1980 12:00:00 AM
Firstpage
1771
Lastpage
1777
Abstract
Unless junction depths are scaled in the same ratio as other device dimensions, the trend toward smaller devices leads to a relative enhancement of junction-edge effects. In this work, we present some analytical formulas describing the injection of current in ideal step-junction diodes having either plane, cylindrical, or spherical geometries. A normalized surface-recombination velocity S*is used to characterize the adjacent boundary condition. Both blocking and collecting contacts may be modeled by a choice of S*.
Keywords
Boundary conditions; Current density; Diodes; Doping; Electron devices; Geometry; Independent component analysis; Solid modeling; Tail;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1980.20101
Filename
1480894
Link To Document