• DocumentCode
    1070068
  • Title

    DC Flashover Voltage Characteristics of Contaminated Insulatirs

  • Author

    Fujimura, T. ; Naito, K. ; Suzuki, Y.

  • Author_Institution
    NGK Insulators, Ltd. Nagoya, Japan
  • Issue
    3
  • fYear
    1981
  • fDate
    6/1/1981 12:00:00 AM
  • Firstpage
    189
  • Lastpage
    198
  • Abstract
    An investigation was made of the influence of the dc power source on the withstand voltage ofntam-contaminated insulators. A thyristor-controlled power source was found stiff enough for the tests. DC contamination tests on various insulators were also carried out. The dc withstand voltage is generally lower than the ac one (rms). There seems to be a tendency that the rate of decrease in dc withstand voltage becomes larger as the contamination degree increases. The dc withstand voltage depends more strongly than the ac one on the insulator shape. The leakage distance per unit withstand voltage increases with the diameter of the insulator. The dc withstand voltage was also affected by the kind and the amount of insoluble material used, as is the case with ac. The withstand voltage decreases with an increase in the deposit density of insoluble material even at the same ESDD. The dc withstand voltage of the insulators ilators with noniform contam-contamination was not less than that based on ESDD assuming uniform contamination. Shown finally is then-conceptual design of insulator assemblies for the ±600 kV dc class.
  • Keywords
    Circuit testing; Contamination; Control systems; Flashover; Insulation testing; Insulator testing; Shape; System testing; Thyristors; Voltage control;
  • fLanguage
    English
  • Journal_Title
    Electrical Insulation, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9367
  • Type

    jour

  • DOI
    10.1109/TEI.1981.298417
  • Filename
    4080833