Improvements in dynamic and noise performance of cryogenic GaAs monolithic ASICs

Author

Camin, D.V. ; Fedyakin, N. ; Pessina, G. ; Previtali, E. ; Sironi, M.

Author_Institution

Dipartimento di Fisica, Istituto Nazionale di Fisica Nucl., Milan, Italy

Volume

43

Issue

3

fYear

1996

fDate

6/1/1996 12:00:00 AM

Firstpage

1649

Lastpage

1655

Abstract

We have developed two new ASICs for cryogenic operation using a GaAs ion-implanted MESFET process. A preamplifier chip for LAr calorimetry has white series noise above 1 MHz with a spectral density of 0.32 nV/√Hz. Power dissipation is 66 mW and GBW 1.7 GHz. Operation at 22 mW power dissipation is also possible, with lower noise and speed performance. A cryogenic buffer/LED driver with 0.6% integral non-linearity for 100 mA maximum output current and 8.7 mW standing power dissipation was also developed

Keywords

application specific integrated circuits; calorimeters; cryogenic electronics; detector circuits; liquid ionisation chambers; liquid scintillation detectors; nuclear electronics; 1 MHz; 100 mA; 8.7 mW; GaAs; GaAs ion-implanted MESFET process; LAr calorimetry; LED driver; cryogenic GaAs monolithic ASICs; cryogenic buffer; dynamic performance; integral nonlinearity; maximum output current; noise performance; power dissipation; preamplifier chip; spectral density; standing power dissipation; white series noise; Application specific integrated circuits; Capacitance; Cryogenics; Gallium arsenide; Integrated circuit noise; MESFETs; Power dissipation; Preamplifiers; Semiconductor device noise; Temperature;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.507164

Filename

507164