Effects of impurity compensation on injection current in Si bipolar transistors

Experiments were performed on n⁺-p-n and p⁺-n⁺-p transistors to examine the effect of boron impurity compensation on the hole current injected into the heavily arsenic-doped n-type silicon. The result shows that the impurity compensation significantly enhances the hole current only at low temperature, and has little effect at room or higher temperatures.