• DocumentCode
    1070175
  • Title

    Depletion-layer calculations of a double-diffused junction

  • Author

    Lin, H.C.

  • Author_Institution
    University of Maryland, College Park, MD
  • Volume
    27
  • Issue
    9
  • fYear
    1980
  • fDate
    9/1/1980 12:00:00 AM
  • Firstpage
    1839
  • Lastpage
    1841
  • Abstract
    The depletion-layer width of a double-diffused or implanted-diffused junction has been calculated for the case of a Gaussian/Gaussian profile. Closed-form solutions of the potential difference between the two edges of the depletion layer are obtained by integrating the Poisson´s equation and equating the positive and negative charges in the depletion layer.
  • Keywords
    Bipolar integrated circuits; Bipolar transistors; Boundary conditions; Capacitance; Closed-form solution; Gaussian distribution; Ion implantation; Poisson equations; Semiconductor devices; Semiconductor impurities;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1980.20113
  • Filename
    1480906
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1070175