• DocumentCode
    1070186
  • Title

    Unusual phenomena in CVD SiO2under sustained electron bombardment

  • Author

    Dobkin, Daniel M. ; Kane, Ronald J.

  • Author_Institution
    Watkins-Johnson Company, Palo Alto, CA
  • Volume
    27
  • Issue
    9
  • fYear
    1980
  • fDate
    9/1/1980 12:00:00 AM
  • Firstpage
    1841
  • Lastpage
    1843
  • Abstract
    SEM observations of passivating oxide after roughly 100 h of exposure to 10-12-keV, 1-10-mA/cm2electrons disclosed several unexpected phenomena, including smoothing and removal of the surface, perforation of the layer, and the growth of filaments at the edges of the illuminated regions. Possible explanations for the above are discussed.
  • Keywords
    Capacitance; Electron devices; Flowcharts; Photonic band gap; Scanning electron microscopy; Semiconductor diodes; Smoothing methods; Solid state circuits; Surface topography; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1980.20114
  • Filename
    1480907
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1070186