DocumentCode
1070197
Title
Geometric effects on the gate-controlled capacitor
Author
Slutsky, E.B. ; Zemel, J.N.
Author_Institution
Bell Laboratories, Reading, PA
Volume
27
Issue
9
fYear
1980
fDate
9/1/1980 12:00:00 AM
Firstpage
1843
Lastpage
1846
Abstract
The effect of p-n junction geometry on the capacitance-voltage ( 
) and conductance-voltage ( 
) characteristics of a gate-controlled Capacitor (GCC) is discussed. Three p-n junction geometries were studied; one was a circular structure and the remaining two were cross structures. It is concluded that the effective transit distances are decreased as the geometries of the junction become more complex.
) and conductance-voltage ( ) characteristics of a gate-controlled Capacitor (GCC) is discussed. Three p-n junction geometries were studied; one was a circular structure and the remaining two were cross structures. It is concluded that the effective transit distances are decreased as the geometries of the junction become more complex.Keywords
Admittance; Arm; Capacitance; Capacitors; Geometry; Material storage; P-n junctions; Resistors; Surface resistance; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1980.20115
Filename
1480908
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