Title :
Maximum Junction Temperatures of SiC Power Devices
Author_Institution :
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
Abstract :
This paper presents a detailed physical analysis on the junction temperatures, thermal stabilities, and thermal runaway effects of self-heating unipolar SiC power devices. Results reveal that the risk of thermal runaway could limit the usable junction temperature of these SiC devices to substantially lower than 200°C, regardless of the device size and the cooling method used.
Keywords :
Schottky diodes; junction gate field effect transistors; power MOSFET; power bipolar transistors; resistors; silicon compounds; thermal stability; wide band gap semiconductors; BJT; JFET; MOSFET; Schottky barrier diodes; SiC; cooling method; junction temperatures; physical analysis; resistors; self-heating unipolar power devices; thermal run-away; thermal stabilities; Circuits; Conducting materials; Packaging; Power semiconductor switches; Schottky barriers; Semiconductor materials; Silicon carbide; Temperature; Thermal resistance; Thermal stability; BJT; JFET; MOSFET; Schottky barrier diodes (SBD); SiC; high temperature; power device;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2008.2010605
