DocumentCode :
1070430
Title :
Degradation of the Reset Switching During Endurance Testing of a Phase-Change Line Cell
Author :
Goux, Ludovic ; Castro, David Tio ; Hurkx, G.A.M. ; Lisoni, Judit G. ; Delhougne, Romain ; Gravesteijn, Dirk J. ; Attenborough, Karen ; Wouters, Dirk J.
Author_Institution :
IMEC, Leuven
Volume :
56
Issue :
2
fYear :
2009
Firstpage :
354
Lastpage :
358
Abstract :
In this brief, we studied the endurance properties of an integrated phase-change line cell. The different characteristics typically observed during the endurance lifetime are described. The monitoring of the switching parameters of the cell (reset current and threshold voltage) during endurance testing could be correlated with a gradual degradation of the reset switching. The following conclusions were drawn: 1) The reset-switching degradation is closely associated to both an increase of the minimum reset current and a decrease of the obtained reset and set resistances, pointing to material change; 2) the extent of the degradation strongly depends on the reset pulsewidth, and it was found to scale with tm 3/2, tm being the melting time during reset pulse; however, higher reset currents did not quicken the onset of degradation; and 3) the tm 3/2 dependence together with polarity-dependent endurance tests suggests the contribution of an electrical-field-driven migration mechanism. Based on these insights, the extended endurance lifetime of more than 1010 cycles could be demonstrated, using short reset pulses, which could be further increased by changing reset polarity before stuck-set failure.
Keywords :
integrated circuit testing; life testing; phase change memories; electrical-field-driven migration mechanism; endurance lifetime; endurance testing; integrated phase-change line cell; melting time; nonvolatile memories; phase-change memories; reset current; reset polarity; reset pulsewidth; reset-switching degradation; switching parameters; threshold voltage; Condition monitoring; Crystallization; Degradation; Electrodes; Materials testing; Nonvolatile memory; Phase change materials; Space vector pulse width modulation; Switches; Threshold voltage; Chalcogenides; nonvolatile memories; phase-change memories;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2008.2010568
Filename :
4752792
Link To Document :
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