• DocumentCode
    1070532
  • Title

    Characteristics of CO2deposited SIPOS films

  • Author

    Zommer, Nathan

  • Author_Institution
    Intersil, Incorporated, Cupertino, CA
  • Volume
    27
  • Issue
    11
  • fYear
    1980
  • fDate
    11/1/1980 12:00:00 AM
  • Firstpage
    2056
  • Lastpage
    2063
  • Abstract
    The current-voltage characteristics of CO2CVD SIPOS films were studied. Structures have been used in which the low-field and high-field conduction regimes were covered. The conduction mechanism corresponds to the general symmetrical Schottky-barrier model with a modified number of grains parameter. It has been shown that the high-field regime (2 × 105V/cm) is characterized by nonohmic behavior, which is an important design factor in the design of high-voltage SIPOS passivated devices.
  • Keywords
    Artificial intelligence; Conductive films; Current-voltage characteristics; Grain size; Helium; Insulation; MOS devices; Semiconductor films; Silicon; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1980.20149
  • Filename
    1480942
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1070532