DocumentCode
1070696
Title
Profiling of optically active defects
Author
Greve, David W. ; Dahlke, Walter E.
Author_Institution
Philips Research Laboratories, Sunnyvale, CA
Volume
27
Issue
11
fYear
1980
fDate
11/1/1980 12:00:00 AM
Firstpage
2152
Lastpage
2155
Abstract
A new method for profiling of optically active defects is presented. Traps in a depletion region are illuminated with chopped extrinsic light 
. The resulting ac photocurrent in the external circuit originates from a small part of the depleted layer. The trap profile is obtained by changing the bias voltage which moves the active traps with respect to the semiconductor surface. The method is illustrated with measurements made on an MOS tunnel device.
. The resulting ac photocurrent in the external circuit originates from a small part of the depleted layer. The trap profile is obtained by changing the bias voltage which moves the active traps with respect to the semiconductor surface. The method is illustrated with measurements made on an MOS tunnel device.Keywords
Dielectric measurements; Electron optics; Electron traps; Optical filters; Optical refraction; Optical sensors; Permittivity measurement; Photoconductivity; Silicon; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1980.20164
Filename
1480957
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