Comparative potential performance of Si, GaAs, GaInAs, InAs submicrometer-gate FET´s

For very-short-gate FET\´s, the nonstationary electron dynamic effects greatly improve the device performance. By means of a simple self-consistent model which takes into account the transient transport effects, a comparison between the frequency behavior of various semiconductor materials is presented. It is shown that the dynamic properties for a given material are ameliorated for greater values of the product . Thus Ga0.47In0.53As and InAs are shown to exhibit quite interesting dynamic operating properties.