• DocumentCode
    1070718
  • Title

    Comparative potential performance of Si, GaAs, GaInAs, InAs submicrometer-gate FET´s

  • Author

    Cappy, A. ; Carnez, B. ; Fauquembergues, R. ; Salmer, G. ; Constant, E.

  • Author_Institution
    Université de Lille, Villeneuve D´´Ascq Cedex, France
  • Volume
    27
  • Issue
    11
  • fYear
    1980
  • fDate
    11/1/1980 12:00:00 AM
  • Firstpage
    2158
  • Lastpage
    2160
  • Abstract
    For very-short-gate FET\´s, the nonstationary electron dynamic effects greatly improve the device performance. By means of a simple self-consistent model which takes into account the transient transport effects, a comparison between the frequency behavior of various semiconductor materials is presented. It is shown that the dynamic properties for a given material are ameliorated for greater values of the product \\mu_{0} \\Delta \\epsilon_{\\Gamma L} . Thus Ga0.47In0.53As and InAs are shown to exhibit quite interesting dynamic operating properties.
  • Keywords
    Electrons; FETs; Gallium arsenide; Indium phosphide; MESFETs; Monte Carlo methods; Predictive models; Radio frequency; Scattering; Semiconductor materials;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1980.20166
  • Filename
    1480959
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1070718