Title :
MP-A3 charge accumulation and mobility in thin-gate MIS devices
Author :
Sodini, Charlie G. ; Hoefflinger, B. ; Moll, J.L.
fDate :
11/1/1980 12:00:00 AM
Keywords :
Capacitance; Capacitance-voltage characteristics; Dielectric devices; Laboratories; Large scale integration; MIS devices; MOS devices; Threshold voltage; Transconductance; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.20178
