Title :
MP-A4 high-performance scaled MOS process suitable for micrometer channel VLSI devices
fDate :
11/1/1980 12:00:00 AM
Keywords :
Doping; Electron mobility; Large scale integration; MOS devices; Scattering; Semiconductor process modeling; Transconductance; Velocity measurement; Very large scale integration; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1980.20180
