Title :
GMR materials for low field applications
Author :
Daughton, J.M. ; Chen, Y.J.
Author_Institution :
Nonvolatile Electronics Inc., Plymouth, MN, USA
fDate :
11/1/1993 12:00:00 AM
Abstract :
The higher magnetoresistance of giant magnetoresistance (GMR) material offers potential improvements for magnetoresistive random access memory (MRAM), magnetoresistive read heads, and magnetic field sensors. Saturation field, linearity, hysteresis, sheet resistivity, magnetostriction, and other factors can impact the utility of GMR materials in applications. These factors are compared for several GMR structures: magnetic sandwiches and multilayers, antiferromagnetic-coupled and uncoupled sandwiches and multilayers, vertical GMR multilayers, and granular films. The most promising GMR materials for low field applications are uncoupled sandwiches and low antiferromagnetic coupled multilayers using inplane conduction. They can be superior to anisotropic magnetoresistance (AMR) materials and Hall effect devices for many applications
Keywords :
electric sensing devices; magnetic film stores; magnetic heads; magnetic multilayers; magnetic thin films; magnetoresistance; magnetoresistive devices; nanostructured materials; antiferromagnetic-coupled sandwiches; giant magnetoresistive materials; granular films; hysteresis; inplane conduction; linearity; low antiferromagnetic coupled multilayers; low field applications; magnetic field sensors; magnetic multilayers; magnetic sandwiches; magnetoresistive random access memory; magnetoresistive read heads; magnetostriction; nanocrystalline; saturation field; sheet resistivity; uncoupled sandwiches; Anisotropic magnetoresistance; Antiferromagnetic materials; Conducting materials; Giant magnetoresistance; Magnetic materials; Magnetic multilayers; Magnetic sensors; Magnetostriction; Random access memory; Sheet materials;
Journal_Title :
Magnetics, IEEE Transactions on
