GMR materials for low field applications

Author

Daughton, J.M. ; Chen, Y.J.

Author_Institution

Nonvolatile Electronics Inc., Plymouth, MN, USA

Volume

29

Issue

6

fYear

1993

fDate

11/1/1993 12:00:00 AM

Firstpage

2705

Lastpage

2710

Abstract

The higher magnetoresistance of giant magnetoresistance (GMR) material offers potential improvements for magnetoresistive random access memory (MRAM), magnetoresistive read heads, and magnetic field sensors. Saturation field, linearity, hysteresis, sheet resistivity, magnetostriction, and other factors can impact the utility of GMR materials in applications. These factors are compared for several GMR structures: magnetic sandwiches and multilayers, antiferromagnetic-coupled and uncoupled sandwiches and multilayers, vertical GMR multilayers, and granular films. The most promising GMR materials for low field applications are uncoupled sandwiches and low antiferromagnetic coupled multilayers using inplane conduction. They can be superior to anisotropic magnetoresistance (AMR) materials and Hall effect devices for many applications

Keywords

electric sensing devices; magnetic film stores; magnetic heads; magnetic multilayers; magnetic thin films; magnetoresistance; magnetoresistive devices; nanostructured materials; antiferromagnetic-coupled sandwiches; giant magnetoresistive materials; granular films; hysteresis; inplane conduction; linearity; low antiferromagnetic coupled multilayers; low field applications; magnetic field sensors; magnetic multilayers; magnetic sandwiches; magnetoresistive random access memory; magnetoresistive read heads; magnetostriction; nanocrystalline; saturation field; sheet resistivity; uncoupled sandwiches; Anisotropic magnetoresistance; Antiferromagnetic materials; Conducting materials; Giant magnetoresistance; Magnetic materials; Magnetic multilayers; Magnetic sensors; Magnetostriction; Random access memory; Sheet materials;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.280936

Filename

280936