DocumentCode

1070968

Title

TA-A2 electrically alterable read-only memory using Si rich SiO2injectors and a floating polycrystalline silicon storage layer

Author

DiMaria, D.J. ; Dong, D.W.

Volume

27

Issue

11

fYear

1980

fDate

11/1/1980 12:00:00 AM

Firstpage

2182

Lastpage

2183

Keywords

Atomic layer deposition; EPROM; Electrons; FETs; Implants; Logic devices; MOSFET circuits; Silicon; Testing; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1980.20190

Filename

1480983